DHH55-36N1F
0 400 800 1200 1600
0
200
400
[ns]
600
800
1000
1200
1400
10-3
10-2
10-1
100
101
10-2
10-1
100
0 40 80 120 160
0.0
0.5
Kf
1.0
1.5
2.0
0 200 400 600 800 1000
0
30
[V]
60
90FR
120
150
0.0
0.5
1.0
1.5
2.0
2.5
0 400 800 1200 1600
0
20
[A]
40
60RM
80
100
0123
100 1000
0
10
20
30
40
0
20
40
[A]
60
F
80
100
120
140
VFR
tfr
IRM
Qr
I
VF
[V]
Qr
[nC]
-diF/dt
[A/μs]
I
-diF/dt
[A/μs]
TVJ
[°C]
trr
-diF/dt
[A/μs]
diF/dt
[A/μs]
V
t
[s]
ZthJC
[K/W]
Fig. 1 Typ. rward current
IF
versus VF
Fig. 2 Typ. reverse recovery charge
Qr
versus -diF/dt
Fig. 3 Typ. peak reverse current
IRM
versus -diF/dt
Fig. 4 Dynamic parameters
Qr,IRM
versus TVJ
Fig. 5 Typ. recovery time
trr
versus -diF/dt
Fig. 6 Typ. peak forward voltage
VFR
& typ. forward recovery
time tfr
versus diF/dt
Fig. 7 Transient thermal resistance junction to case
tfr
[μs]
Constants for ZthJC
calculation:
iRthi
(K/W) t
i
(s)
1 0.212 0.0055
2 0.248 0.0092
3 0.063 0.0007
4 0.077 0.0391
TVJ=100°C
VR
= 1200 V
IF
= 60 A
TVJ= 100°C
VR
= 1200 V
IF
=60 A
TVJ=100°C
VR
= 1200 V
IF
= 60 A
TVJ= 100°C
VR
= 1200 V
TVJ
=125°C
TVJ
=25°C
IXYS reserves the right to change limits, conditions and dimensions.
?
2011 IXYS all rights reserved
20110908c
Data according to IEC 60747and per diode unless otherwise specified
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